advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 20v capable of 2.5v gate drive r ds(on) 18.5m fast switching characteristic i d 21a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 10 /w rthj-a 62.5 /w data and specifications subject to change without notice 201107051 halogen-free product 1 -55 to 150 maximum thermal resistance, junction-ambient (pcb mount) 3 total power dissipation 3 2 drain-source voltage 20 AP4434GH-HF parameter rating gate-source voltage + 12 continuous drain current, v gs @ 4.5v 21 continuous drain current, v gs @ 4.5v 13 pulsed drain current 1 80 total power dissipation 12.5 parameter storage temperature range operating junction temperature range -55 to 150 thermal data g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. g d s to-252(h) the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =12a - - 18.5 m v gs =2.5v, i d =8a - - 30 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.3 - 1 v g fs forward transconductance v ds =5v, i d =12a - 29 - s i dss drain-source leakage current v ds =16v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge i d =12a - 9.5 15 nc q gs gate-source charge v ds =16v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5 - nc t d(on) turn-on delay time v ds =10v - 11 - ns t r rise time i d =12a - 60 - ns t d(off) turn-off delay time r g =3.3 -15- ns t f fall time v gs =5v - 9 - ns c iss input capacitance v gs =0v - 575 920 pf c oss output capacitance v ds =20v - 130 - pf c rss reverse transfer capacitance f=1.0mhz - 120 - pf r g gate resistance f=1.0mhz - 1.7 3.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =12a, v gs =0v - - 1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP4434GH-HF
AP4434GH-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 60 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 5.0v 4.5v 3.5v 2.5v v g =1.8v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =4.5v 0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.6 1.2 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 20 40 60 80 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 5.0v 4.5v 3.5v 2.5v v g =1.8v i d =1ma 10 14 18 22 26 30 0246 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =8a t c =25
AP4434GH-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 4 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z 0 1 2 3 4 5 6 7 8 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =16v 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 10 20 30 40 50 012345 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v operation in this area limited by r ds(on) c iss c oss c rss t j =-40 o c 0 4 8 12 16 20 24 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a)
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